Solvent-induced current-voltage hysteresis and negative differential resistance in molecular junctions
نویسندگان
چکیده
منابع مشابه
Interaction-induced negative differential resistance in asymmetric molecular junctions.
Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from an interplay of orbital spatial asymmetry and strong electron-electron interaction, which causes the molecule to become trapped in a nonconducting state abov...
متن کاملHysteresis, switching, and negative differential resistance in molecular junctions: a polaron model.
Within a simple mean-field model (self-consistent Hartree approximation) we discuss the possibility of polaron formation on a molecular wire as a mechanism for negative differential resistance (NDR), switching, and/or hysteresis in the I-V characteristic of molecular junctions. This mechanism differs from earlier proposed mechanisms of charging and conformational change. The polaron model captu...
متن کامل, Observation of negative differential resistance in DNA molecular junctions
The mechanically controllable break junction technique is used to study charge transport through suspended DNA molecules. The current-voltage (I-V) characteristics in an aqueous solution display series of negative differential resistance (NDR) and hysteresis behavior. Under high-vacuum conditions, the peak positions of NDR shift to lower voltage, and the amplitude is reduced dramatically. The o...
متن کاملRoom-temperature negative differential resistance in nanoscale molecular junctions
Molecular devices are reported utilizing active self-assembled monolayers containing the nitroamine @28-amino-4,48-di~ethynylphenyl!-58-nitro-1-benzenethiolate# or the nitro compound @4,48-di~ethynylphenyl!-28-nitro-1-benzenethiolate# as the active components. Both of these compounds have active redox centers. Current–voltage measurements of the devices exhibited negative differential resistanc...
متن کاملCurrent-induced phonon renormalization in molecular junctions
Meilin Bai,1,2 Clotilde S. Cucinotta,2,* Zhuoling Jiang,1 Hao Wang,1 Yongfeng Wang,1,3 Ivan Rungger,2,4 Stefano Sanvito,2,* and Shimin Hou1,3,* 1Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China 2School of Physics, Advanced Materials and Bioengineering Research Centre (AMBER) and Centre for Research on Adaptive Nanos...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2012
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.85.033408